Semiconductor device

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357 71, H01L 2354, H01L 2348

Patent

active

048841218

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a convex portion and at least one conductive interconnection layer formed over the substrate. The interconnection layer has a contact region to be electrically connected. The convex portion of the substrate is formed in correspondence with the contact region, so that a step of the underlying layer for the interconnection layer is removed.

REFERENCES:
patent: 3509433 (1970-04-01), Schroeder
patent: 3631307 (1971-12-01), Naugler
patent: 4587549 (1986-05-01), Ushiku
Madland et al., Integrated Circuit Engineering Basic Technology, Boston Technical Publishers, Inc., 1966, (Chapters 2, 4 and 6).
Symposium on VLSI Technology Digest of Technical Papers, "Aluminum Plasma-CVD For VLSI Circuit Interconnections", by T. Ito et al., 1982, pp. 20-21.

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