Process for the preparation of a PIN opto-electric conversion el

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437101, 427 451, 427 74, 136258, H01L 3118

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048267783

ABSTRACT:
A PIN opto-electric conversion element having an improved i-type semiconductive layer composed of a silicon and germanium containing non-single-crystal material completely free from dopant contamination which excels in photoconductive characteristics and has an improved photoelectric conversion efficiency. There is also provided a process for producing said PIN opto-electric conversion element which is characterized in that said i-type semiconductive layer is formed by providing (i) an active species generated by decomposing a substance containing silicon and halogen atoms with the action of an excitation energy, (ii) another active species generated by decomposing a substance containing germanium and halogen atoms with the action of an excitation energy and (iii) still another active species generated from a substance contributing to form said i-type semiconductive layer, and chemically reacting said active species (i), (ii) and (iii) in a reaction region surrounding a substrate maintained at a desired temperature in a deposition chamber in the absence of a plasma.

REFERENCES:
patent: 4716048 (1987-12-01), Ishihara et al.
patent: 4717586 (1988-01-01), Ishihara et al.

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