Interlevel dielectric structure

Details Interlevel dielectric structure Interlevel dielectric structure

1999-02-12

2000-08-22

Quach, T. N.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257763, 257752, H01L 2348

Patent

active

061076864

ABSTRACT:
An interlevel dielectric structure includes first and second dielectric layers between which are located lines of a conductive material with a dielectric material in spaces between the lines of conductive material, with the lower surface of the dielectric material extending lower than the lower surface of lines of conductive material adjacent thereto, and the upper surface of the dielectric material extending higher than the upper surface of conductive material adjacent thereto, thus reducing fringe and total capacitance between the lines of conductive material. The dielectric material, which has a dielectric constant of less than about 3.6, does not extend directly above the upper surface of the lines of conductive material, allowing formation of subsequent contacts down to the lines of conductive material without exposing the dielectric material to further processing. Various methods for forming the interlevel dielectric structure are disclosed.

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M.K. Jain et al., "Advanced Metallization and Interconnect Systems for ULSI Applications: Homogenous and Multilayer Low-K Interlevel Dielectric Architectures for Capacitance Reduction," Conference at University of California, Berkley, California, Oct., 1996, pp. 1-3.
Tetsuya Homma, "Fluorinated SiO2 Films for Interlayer Dielectrics in Quarter-Micron ULSI Multilevel Interconnections," Mat. Res. Soc. Symp. Proc., vol. 381, pp. 239-248, 1995.
J. Wary et al., "Vacuum-Deposited Parylene AF-4 Thermally Stable, Low Dielectric Constant Polymer For Interlayer Dielectric Use," DUMIC Conference, pp. 207-213, Feb. 1996.

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