Semiconductor device and method of production

Details Semiconductor device and method of production Semiconductor device and method of production

1987-07-16

1991-01-15

Wojciechowicz, Edward J.

357 239, 357 42, 357 59, H01L 2348

Patent

active

049857460

ABSTRACT:
A novel semiconductor device and method of production of such a device are provided. Both the N and P channels of the novel semiconductor device are formed by contact self-alignment, thereby permitting high speed operation and high density integration to be realized. The formation of the channels by contact self-alignment is accomplished by depositing a P type polysilicon layer on an N well region and an N type polysilicon layer on a P well region. A silicide layer if formed over both the P and N type polysilicon layers to form a polycide.

REFERENCES:
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4476482 (1984-10-01), Scott et al.
patent: 4477310 (1984-10-01), Park

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