Photoelectric converter with light shielding sections

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257440, 257443, 257448, H01L 2714

Patent

active

053529200

ABSTRACT:
A photoelectric converter comprised of a semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.

REFERENCES:
patent: 4972243 (1990-11-01), Sugawa et al.
patent: 5101253 (1992-03-01), Mizutani et al.
patent: 5124544 (1992-06-01), Ohzu
patent: 5274250 (1993-12-01), Miyake et al.

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