Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices
Patent
1992-08-17
1994-03-01
Picard, Leo P.
Electricity: electrical systems and devices
Housing or mounting assemblies with diverse electrical...
For electronic systems and devices
361707, 361767, 361810, 174 522, 174255, 257686, 257781, H05K 702
Patent
active
052913740
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
This invention relates to a semiconductor device which can relieve force applied to electrode pads during the implementation of inner lead bonding (ILB) or wire bonding, and a manufacturing method therefor.
BACKGROUND OF THE INVENTION
Semiconductor devices such as LSI and IC generally have external terminals through which semiconductor elements inside the semiconductor devices are electrically connected to external circuits. As an external terminal, an outer lead of a tape carrier is sometimes utilized and a lead of a lead frame or other means is also utilized. The outer lead is connected to an inner lead of the tape carrier, and the inner lead is electrically connected to an internal circuit of a semiconductor device through an electrode pad provided to the surface of the semiconductor device. The lead of the lead frame is electrically connected to the electrode pad via a bonding wire.
The electrode pads are left exposed for a long time before finally being sealed and protected by resin. However, since materials of the electrode pads consist mainly of aluminum or aluminum alloy, their moisture-resistance characteristic is insufficient and they are therefore easily corroded. Consequently, an insulating protective film is provided on the surface of the electrode pad. Since the electrode pads have to be connected to an external circuit connecting means, the insulating protective film is partially removed on the electrode pads to expose the pads and the external circuit connecting means is then connected. The insulating protective film is removed by a so-called excessive removal method in which an insulating protective film of larger area than that of the electrode pad is removed, has usually been used because of the ease of the process. However, by this method, the function of protection will almost be lost because the electrode pad is excessively exposed. Therefore, a so-called partial removal method in which the insulating protective film is partially removed to expose the necessary area of the electrode pad has come to be used. According to this method, since the electrode pad is sufficiently protected, the characteristics of semiconductor devices are not deteriorated.
With reference to FIGS. 14 to 17, a conventional semiconductor device using the partial removal method will be described hereinbelow.
As shown in FIG. 7 which is a plan view of a semiconductor device of the present invention, a semiconductor device 1 having a bump structure is provided with a semiconductor element 10 and a plurality of electrode pads 2 arranged around the outer periphery of the semiconductor element 10, with the semiconductor element 10 and the electrode pads being connected by signal lines 5. FIG. 14 shows a cross sectional view of the electrode pad part of the conventional semiconductor device. The electrode pads 2 are connected to inner leads 15 of a tape carrier by an ILB (Inner Lead Bonding) process, for instance, so that signals can be transmitted or received or a power voltage can be supplied between the electrode pads 2 and the inner lead 15. The ILB is a bonding to connect the electrode pad and the inner lead by a bump.
Next, with reference to FIGS. 14 and 15, the structure of an electrode pad of a conventional semiconductor device will be described. FIG. 15 is a perspective plan view of the structure shown in FIG. 14, with the inner lead 15 omitted. An electrode pad 2 is formed on a semiconductor substrate 11 via an insulating film 12, and the electrode pad 2 is covered with a protective film 9. This protective film 9 is formed with an opening 6 for bump connection, and a bump 7 is formed on the electrode pad via the opening 6 for the bump connection. This bump 7 serves to connect the inner lead 15 to the electrode pad 2. A barrier metal layer 8 is formed between the electrode pad 2 and the bump 7.
Though an example in which a bump is provided on an electrode and the bump is connected to the inner lead of a tape carrier has been described, there is also a wire bonding method in which a fine wir
REFERENCES:
patent: 4509096 (1985-04-01), Baldwin et al.
patent: 5081562 (1992-01-01), Adachi et al.
patent: 5095627 (1992-03-01), Bujagec et al.
Hirata Seiichi
Yoshida Akito
Kabushiki Kaisha Toshiba
Picard Leo P.
Whang Young
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