Method of producing semiconductor devices

Details Method of producing semiconductor devices Method of producing semiconductor devices

1982-01-27

1983-09-20

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29591, 148187, 148188, 148189, H01L 21223

Patent

active

044047339

ABSTRACT:
An improved contact hole in a method of producing a semiconductor device by forming a silicon dioxide insulating layer by a chemical vapor deposition method on a semiconductor substrate, forming a contact hole in the insulating layer diffusing phosphorus or boron impurities into a portion of the insulating layer around the contact hole, heating the substrate to cause plastic flow of the insulating layer; and forming a conductive layer on the insulating layer, wherein the portion of the insulating layer containing a high concentration of phosphorus or boron plastically flows during the heating step.

REFERENCES:
patent: 3825442 (1974-07-01), Moore
patent: 4124933 (1978-11-01), Nicholas
patent: 4224089 (1980-09-01), Nishimoto et al.
patent: 4265685 (1981-05-01), Seki
patent: 4266985 (1981-05-01), Ito et al.
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4273805 (1981-06-01), Dawson et al.
patent: 4348802 (1982-09-01), Shirato
patent: 4371403 (1983-02-01), Ikubo et al.
Woo et al., RCA Technical Notes, No. 1234, Nov. 27, 1979, 2 pages.

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