Mesa fabrication in semiconductor structures

Details Mesa fabrication in semiconductor structures Mesa fabrication in semiconductor structures

1989-02-28

1989-11-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, 156649, 1566611, 357 56, 357 26, H01L 2906

Patent

active

048837687

ABSTRACT:
Semiconductor structures for electronic use, such as for example a silicon-glass-silicon pressure sensor (Fig. 3), include mesa or pedestal structures (12A) extending up from silicon substrates (12). In the invention the mesa structures are fabricated in an oxidation process applied in a cyclical fashion (steps 1-3 through 1-5 of Fig. 1). Each cycle includes a photolithographic operation to protect the previously grown oxide on the mesas from etching. During each cycle less oxide is grown (or conversely silicon consumed) on the mesas than in the preceding cycle, while equivalent amounts of oxide are grown on non-mesa areas in each cycle. As a result, the tops of the mesas get higher and higher above the surrounding areas in each cycle. In order to prevent the leaving of any oxide "scraps" in a non-mesa area during the oxidation steps, resulting from a flaw in the mask, a double exposure process is used, utilizing two completely independent masks, with a positive working photo-resist.

REFERENCES:
patent: 4167745 (1979-09-01), Ishibashi et al.
patent: 4635344 (1987-01-01), Havemann

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