MOS-controlled bipolar power semiconductor component

Details MOS-controlled bipolar power semiconductor component MOS-controlled bipolar power semiconductor component

1990-06-14

1991-01-15

Wojciechowicz, Edward J.

357 234, 357 2314, 357 38, 357 43, 357 86, H01L 2972

Patent

active

049857410

ABSTRACT:
In an MOS-controlled bipolar power semiconductor component, a recombination layer (10), which is doped with the same polarity as the base layer but more highly, is inserted, starting with the structure of an IGBT, into the base layer between anode (A) and cathode (K), which recombination layer divides the base layer into an upper and lower base layer (7a and 7b, respectively). The resultant structure forms a series circuit of MOSFET (T) and PIN diode (D) which is free of latch-up and provides the possibility of higher blocking voltages.

REFERENCES:
patent: 4914496 (1990-04-01), Nakagawa et al.
IEEE Electron Device Letters, vol. EDL-6, No. 8, Aug. 8, 1985, T. P. Chow et al.: "The Effect of MOS Channel Length on the Performance of Insulated Gate Transistors", pp. 413-415.

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