Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1991-10-03
1994-02-01
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504921, 25049222, H01J 3730
Patent
active
052834409
ABSTRACT:
An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
REFERENCES:
patent: 4393312 (1983-07-01), Collier et al.
patent: 4728797 (1988-03-01), Gotou et al.
patent: 5047646 (1991-09-01), Hattori et al.
3rd Microprocess Conference Jul. 16-19, 1990, Digest of Papers, "Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs", F., Murai et al, pp. 172-173.
Itoh Hiroyuki
Nakayama Yoshinori
Okazaki Shinji
Saitou Norio
Shinada Hiroyuki
Berman Jack I.
Beyer James
Hitachi , Ltd.
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