Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1994-02-15

1994-10-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437235, 437238, 437919, H01L 2170

Patent

active

053526236

ABSTRACT:
A method for manufacturing a semiconductor device, wherein a thin film of tantalum oxide is formed as a dielectric film in a capacitor element, increases capacitance per unit area and reduces a leakage current in the capacitor element of DRAM memory cells. The method includes steps of forming a polysilicon film constituting a lower electrode of the capacitor element, removing a natural oxide film from the surface of the polysilicon film, nitriding the surface of the polysilicon by rapid thermal nitriding (RTN) using lamp-annealing, forming a tantalum oxide film, densifying and nitriding consecutively the tantalum oxide film, and forming an upper capacitor electrode thereon. The capacitor element formed by the method has a large capacitance per unit area Cs=13.8 fF/.mu.m.sup.2.

REFERENCES:
patent: 4495219 (1985-01-01), Kato et al.
patent: 5248629 (1993-09-01), Muroyama

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