Fishing – trapping – and vermin destroying
Patent
1993-06-02
1994-10-04
Thomas, Tom
Fishing, trapping, and vermin destroying
437 43, 437 44, 437 48, H01L 2170
Patent
active
053526201
ABSTRACT:
Disclosed is a semiconductor integrated circuit device which includes first field effect transistors of an LDD structure having a floating gate as memory cells and second field effect transistors of the LDD structure as elements other than the memory cells, and which is used as EPROM. A shallow, low impurity concentration region of the first field effect transistor as a part of its source or drain region has a higher impurity concentration than a shallow, low impurity concentration region of the second field effect transistor as a part of its source or drain region.
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Komori Kazuhiro
Kuroda Kenichi
Sugiura June
Hitachi , Ltd.
Thomas Tom
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