Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-06-17
2000-08-22
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438739, 438745, 438753, H01L 2120
Patent
active
061072095
ABSTRACT:
A method of Si anisotropic etching makes it possible to relax the restrictions imposed upon the processing configuration of an Si substrate provided with the <100> plane orientation. This Si anisotropic etching method can be preferably used for the formation of the ink supply opening of an ink jet head, for example. When an Si material (Si substrate) having the <100> crystal plane orientation is processed by this anisotropic etching method, it is arranged to give heat treatment to such Si material in advance before etching. Thus, the processed section can be obtained in a bent configuration formed by the two <111> planes of crystal plane orientation. Therefore, the etching initiation surface is made smaller than that needed for the conventional art even when the same width should be obtained for a penetrating process, hence making a chip smaller accordingly for the reduction of costs.
REFERENCES:
patent: 4007464 (1977-02-01), Bassous et al.
patent: 4007484 (1977-02-01), Bassous et al.
patent: 4312008 (1982-01-01), Taub et al.
patent: 5141596 (1992-08-01), Hawkins et al.
Brown Charlotte A.
Canon Kabushiki Kaisha
Utech Benjamin L.
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