Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-09-14
2000-08-22
Elms, Richard
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438719, 438720, 438721, H01L 21302, H01L 21461
Patent
active
061072060
ABSTRACT:
A method of etching closely spaced trenches in a silicon body wherein a masked silicon body is introduced into a plasma etching apparatus. An object having an exposed silicon surface that is consumable by a plasma environment is provided in the apparatus. A reactive plasma environment is established in the apparatus which removes silicon from the body and the silicon object. The additional silicon from the object in the plasma influences the silicon removal from the body to thereby provide tapered trench side walls.
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Chao Li-Chih
Chen Chao-Cheng
Ackerman Stephen B.
Elms Richard
Lebentritt Michael S.
Saile George O.
Stoffel Wolmar J.
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