Low-leakage JFET

Details Low-leakage JFET Low-leakage JFET

1987-04-27

1991-01-15

Hille, Rolf

357 71, 357 89, 357 15, H01L 2980, H01L 2348

Patent

active

049857398

ABSTRACT:
A low-leakage-current JFET having electrically isolated top and bottom gates. The structure employs enclosed geometry wherein one source/drain region fully surrounds the other source/drain region. Connection to the top gate is made through a diffusion-barrier to prevent penetration of metallization into the top gate contact region. A non-penetrating contact layer is provided on the upper surface of the top gate so that the material of the contact layer does not enter the top gate region to any significant extent. Both the channel region and the shield layer are formed by ion-implantation.

REFERENCES:
patent: 4412238 (1983-10-01), Khadder et al.

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