Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1990-12-12
1994-03-01
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257232, 257233, 377 60, 377 62, 348314, H01L 2978, H01L 2714, H01L 3100
Patent
active
052910440
ABSTRACT:
In a solid state image sensor, such as a CCD image sensor having lateral antiblooming protection, the level of which is controlled by an overflow gate voltage forming a barrier, the storage of electrons in the photodiode junction region of the sensor is eliminated by removing the barrier and allowing the charge to flow from the sensor's photodiode junctions into the overflow region. The charge flow is then detected as a function of the instantaneous light impinging on the photodiodes. The physical connections of the overflow gates are selected to form zones. Since the charge flow now represent the instantaneous light intensity, higher frequency components are detected than that limited by the sensor sampling rate. An amplifier is connected to sense the charge flow from each zone. With the range of light intensity being large the amplifier is provided with a logarithmic feed back element. This element provides compression of a signal representing the sensed charge flow.
REFERENCES:
patent: 4644572 (1987-02-01), Lambeth
patent: 4678938 (1987-07-01), Nakamura
patent: 4733302 (1988-03-01), Kinoshita et al.
patent: 4907050 (1990-03-01), Yamada
patent: 4984047 (1991-01-01), Stevens
Gaboury Michael J.
Lee Teh-Hsuang
Stevens Eric G.
Eastman Kodak Company
Ngo Ngan
Woods David M.
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