Process for the formation of SiO.sub.2 films

Details Process for the formation of SiO.sub.2 films Process for the formation of SiO.sub.2 films

1992-08-31

1994-10-04

Bell, Janyce

Coating processes

Coating by vapor, gas, or smoke

427585, C23C 1600

Patent

active

053524870

ABSTRACT:
An apparatus and method for the low temperature deposition of SiO.sub.2 in a low pressure chemical vapor deposition system is disclosed. The apparatus makes use of a prereactor to form an activated form of diacetoxyditertiarybutoxysilane (DADBS) from which SiO.sub.2 is deposited. The prereactor may be positioned upstream of an SiO.sub.2 deposition reactor or may be incorporated into the front end thereof.

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