TiW.sub.2 N Fusible links in semiconductor integrated circuits

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 71, 357 51, 357 67, 357 23C, 365 96, 365103, 365104, H01L 21479, H01L 2170, H01L 2194, H01L 2354

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active

044918607

ABSTRACT:
A film of titanitum-tungsten nitride is used to provide the dual function of a fuse link between a semiconductive device and an interconnect line in a memory array and of a barrier metal between another metal and a semiconductor region.

REFERENCES:
patent: Re28481 (1975-07-01), Shields et al.
patent: 4179533 (1979-12-01), Christou et al.
"High-Temperature Contact Structures for Silicon Semiconductor Devices", Author: Wittmer-Appl. Phys. Lett. 37(6), Sep. 15, 1980, American Institute of Physics, pp. 540-542.
Magnetron Sputtered Titanium-Tungsten Films, by M. Hill, Solid State Technology, Jan. 1980, pp. 53-59.
Simple Process Propels Bipolar Proms to 16K Density and Beyond, by R. K. Wallace and A. J. Learn, Electronics, Mar. 27, 1980, pp. 147-150.
Corrosion Resistance of Several Integrated Circuit Metallization Schemes, by J. A. Cunningham, C. R. Fuller C. T. Haywood, IEEE Transactions Rel, vol. 19, 1970, pp. 182-187.
Application of Titanium-Tungsten Barrier Metallization For Integrated Circuits, by P. B. Ghate, J. C. Blair, C. R. Fuller and G. E. McGuire, Thin Solid Films, vol. 53, 1978, pp. 117-128.
Studies of the Ti-W/Au Metallization on Aluminum, by R. S. Nowicki, J. M. Harris, M. A. Nicolet and I. V. Mitchell, Thin Solid Films, vol. 53, 1978, pp. 195-205.

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