Patent
1984-02-27
1985-01-01
James, Andrew J.
357 41, 357 42, 357 59, 357 65, 357 68, 357 80, 357 23, H01L 2712, H01L 2978, H01L 2702, H01L 2348
Patent
active
044918569
ABSTRACT:
A semiconductor device includes p- and n-type semiconductor layers formed on an insulating substrate and an n-type interconnection layer formed to be electrically coupled with said n-type semiconductor layer. The n-type interconnection layer is formed in contact with the p-type semiconductor layer and is set at such a potential as to apply a reverse voltage across the p-n junction between the n-type interconnection layer and p-type semiconductor layer, so as to electrically isolate the n-type interconnection layer from the p-type semiconductor layer.
REFERENCES:
patent: 3080441 (1963-03-01), Willandson et al.
patent: 3271632 (1966-09-01), Hartmann
patent: 3460006 (1969-08-01), Strull
patent: 3600651 (1971-08-01), Duncan
patent: 3979230 (1976-09-01), Anthony et al.
patent: 4001873 (1977-01-01), Kajiwara et al.
patent: 4161745 (1979-07-01), Slib
patent: 4191964 (1980-03-01), Kant
patent: 4196443 (1980-04-01), Dingwall
patent: 4209797 (1980-06-01), Egawa et al.
MOS-Technologien, Gerlach, Funkschau, 1975, No. 24, pp. 56-59.
MOS-Technologien, Gerlach, Funkschau, 1975, No. 25, pp. 58-62.
Nikkei Electronics, 1979, 7.23, pp. 110-132, and partial translation of p. 126.
Egawa Hideharu
Maeguchi Kenji
Nishi Yoshio
Carroll J.
James Andrew J.
Tokyo Shibaura Denki Kabushiki Kaisha
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