Photoconductive material and photosensor employing the photocond

Details Photoconductive material and photosensor employing the photocond Photoconductive material and photosensor employing the photocond

1992-06-10

1994-02-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 3, 437101, 148DIG1, H01L 3118

Patent

active

052832074

ABSTRACT:
A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

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