Bidirectionally source stacked FETs with drain-referenced common

Details Bidirectionally source stacked FETs with drain-referenced common Bidirectionally source stacked FETs with drain-referenced common

1982-09-28

1985-01-01

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307583, 307499, 307570, 307585, H03K 1708, H03K 1710, H03K 17687

Patent

active

044917503

ABSTRACT:
A bidirectionally source stacked FET circuit is provided with drain-referencing of the gating circuitry, instead of source-referencing. This requisite gate to source potential to charge the gate and effect conduction of the FETs is provided by referencing the gate circuitry to a common anode point of diodes having their cathodes connected to the drains of the FETs. The common anode point is at substantially the same potential as the common source point of the FETs. The gate charging potential is provided by current from a current source through a resistor to the common anode point, which IR drop establishes the requisite gate voltage to drive the corresponding FET into conduction regardless of the polarity of first and second main terminals at respective FET drains.

REFERENCES:
patent: 3532899 (1970-10-01), Huth et al.

Affiliated with

Also associated with

Rating

Bidirectionally source stacked FETs with drain-referenced common does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bidirectionally source stacked FETs with drain-referenced common, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bidirectionally source stacked FETs with drain-referenced common will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-578752