Metal working – Barrier layer or semiconductor device making
Patent
1992-04-15
1994-10-04
Breneman, R. Bruce
Metal working
Barrier layer or semiconductor device making
156626, H01L 2100, H01L 2102, H01L 21306
Patent
active
053522486
ABSTRACT:
A method of measuring and controlling the temperature of articles stacked in parallel in a chamber. A pyrometer is positioned outside of a chamber and directed, either directly or with mirrors, through a window in the chamber wall so that only energy from wafers removed from the ends of the stack is received by the pyrometer. The pyrometer is inclined at an angle so that substantially all energy from the opposite side of the stack and reflected through spaces between facing parallel pairs of wafer surfaces will have been reflected a large number of times by the wafers before entering the pyrometer. Thus, regardless of the emissivity or transmissivity of the wafers, the energy incident upon the pyrometer will approach that emitted by a black body of the same temperature as the wafers, and the temperature read by the pyrometer will be independent of the emissivity or transmissivity of the wafers.
REFERENCES:
patent: 2690078 (1954-09-01), Phillips, Jr.
patent: 4020695 (1977-05-01), Roney
patent: 4435093 (1984-03-01), Krause et al.
patent: 4452538 (1984-06-01), Reger et al.
patent: 4649261 (1987-03-01), Sheets
patent: 4657386 (1987-04-01), Suarez-Gonzalez et al.
patent: 4666297 (1987-05-01), Suarez-Gonzalez
patent: 4708474 (1987-11-01), Suarez-Gonzalez
patent: 4797006 (1989-01-01), Masom
patent: 4799787 (1989-01-01), Mason
patent: 4823291 (1989-04-01), Berman
patent: 4919542 (1990-04-01), Nulman et al.
patent: 4924478 (1990-05-01), Tank
patent: 4969748 (1990-11-01), Crowley et al.
patent: 4979134 (1990-12-01), Arima et al.
patent: 4984902 (1991-01-01), Crowley et al.
patent: 5061084 (1991-10-01), Thompson et al.
patent: 5156461 (1992-10-01), Moslehi et al.
Watanabe, T. et al., "Radiation Thermometry of Silicon Wafers in a Diffusion Furnace for Fabrication of LSI", IEE Transactions Transactions on Semiconductor Manufacturing, Feb., 1991.
Ishikawa Hiroichi
Kolesa Michael S.
Breneman R. Bruce
Everhart B.
Materials Research Corporation
LandOfFree
Pyrometer temperature measurement of plural wafers stacked on a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pyrometer temperature measurement of plural wafers stacked on a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pyrometer temperature measurement of plural wafers stacked on a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-578634