Coating apparatus – Gas or vapor deposition – With treating means
Patent
1992-06-10
1994-02-01
Hearn, Brian E.
Coating apparatus
Gas or vapor deposition
With treating means
118719, 156345, 20429838, 31511121, 31511141, 31511171, 31511181, C23C 1650, H01J 3700, H01L 2100
Patent
active
052828999
ABSTRACT:
Apparatus for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials. Two sources are used to which produce two axially opposing and aligned electron cyclotron resonance (ECR) plasma streams that meet in a reaction chamber disposed between the two resonators.
REFERENCES:
patent: 4113514 (1978-07-01), Pankove et al.
patent: 4224084 (1980-09-01), Pankove
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4898118 (1990-02-01), Murakami et al.
patent: 4952273 (1990-08-01), Popov
patent: 5038713 (1991-08-01), Kanakami et al.
Garner et al. "An Inexpensive X-ray Source Based On An Electron Cyclotron" Rev. Sci. Instrum. 61(2), Feb. 1990, pp. 724-727.
Brynjolfsson "Factors Influencing Economic Evaluation Of Irradiation Processing" Factors Influencing The Economical Application Of Food Irradiation Symposium Proceeding, Jun. 14-18, 1971, 1973, pp. 13-35.
Popov, "An Electron Cyclotron Plasma Stream Source For Low Pressure Thin Film Production" Surface and Coatings Technology, 36 (1988) pp. 917-925.
Popov, "Effects of Magnetic Field and Microwave Power on Electron Cyclotron Resonance Type plasma characteristids" J. Vac. Sci. Technol A, vol. 9, No. 3, May/Jun. 1991 pp. 711-716.
Conrad et al., "Plasma source ion-implantation technique for Surface Modification of Materials", J. Appl. Phy., vol. 62, No. 11, Dec. 1, 1987, pp. 4591-4596.
Hirano et al. "Extension of Bearing Endurance Life By Ion Implantation" Appl. Phys. Lett., vol. 49, No. 13, Sep. 29, 1986, pp. 779-781.
Barbour et al. "Silicon Nitride Formation from a Silane-Nitrogen Electron Cyclotron Resonance Plasma", J. Vac. Sci. Technol-A, vol. 9, No. 3, May/Jun. 1991, pp. 480-484.
Knox et al. "Characterization of Electronic and Optical Properties of Device Quality a-Si:H and a-(Si,Ge): H grown by remote plasma electron cyclotron Resonance deposition", J. Vac. Sci Technol A, vol. 9, No. 3, May/Jun. 1991, pp. 474-479.
Polyakov et al. "Atomic Hydrogen Passivation of Deep Levels Activity In Al.sub.x Ga.sub.1-x A.sub.s Multiquantum Well Structures", Solid State Communications, vol. 76, No. 6, pp. 761-763 (1990).
Pakhomov et al., "Atomic Hydrogen Modification of Polycrystalline Silicon Solor Cells Characteristics", Solid State Communications, vol. 76, No. 7, pp. 887-890 (1990).
Balmashnov et al. "CERA-C: the System For Hydrogenation of Semiconductors by the method of Crossed Beams", Contributed Papers of XX International Conference on phenomena in ionized Gases, Pisa, Italy, Jul. 1991.
Polyakov, et al. "The Effect of Hydrogen On Bulk And Surface Traps In Indium Antimonide", Solid State Communications, vol. 74, No. 8, pp. 711-715 (1990).
Popov et al., "Electron Cyclotron Resonance Plasma Stream Source For Plasma Enhanced Chemical Vapor Deposition" J. Vac. Technol. A7(3) May/Jun. 1989 pp. 914-917.
Balmashnov et al., "Passivation of GaAs by Atomic Hydrogen Flow Produced by the Crossed Beams Method" Semicond. Sci. Technol, 5 (1990) pp. 242-245.
Omeljanovsky et al. "Hydrogen Passivation of Defects and Impurities GaAs and InP" J. Electronic Materials, vol. 18, No. 6, 1989 pp. 659-670.
Popov "Electron Cyclotron Resonance Plasmas Excited By Rectangular and Circular Microwave Modes" J. V. Sci. Technical A 8(3) May/Jun. 1990 pp. 2909-2912.
Popov et al., "Microwave Plasma Source For Remote Low Energy Ion Stream" Rev. Sci. Instrum., 61 (1), Jan. 1990 pp. 300-302.
Popov et al., "Electron Cyclotron Resonance Sources For Wide and Narrow Plasma Streams", Rev. Sci. Instrum., 61(1), Jan. 1990 pp. 303-305.
Product Literature for ECR System 9200, Plasma Stream Sources Models 904, 904GR, 906, 906GR, 908. ECR Ion Miller Model 1M601, ECRJr. Research System, Micromagnitrons, Micro 1000 Heater, Researcher 101, ECR Retrofit by Microscience, nine single pages and one tri-fold document.
Shapoval et al., "Cubic Boron Nitride Films Deposited by Electron Cyclotron Resonance Plasma" Appl. Phys. Lett. 57(18), Oct. 29, 1990, pp. 1885.sub.]1886.
Balmashnov Alexander A.
Golovanivsky Konstantin S.
Omeljanovsky Erzam M.
Pakhomov Andrew V.
Polyakov Alexander Y.
Baskin Jonathan D.
Hearn Brian E.
Ruxam, Inc.
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