Method of manufacturing semiconductor devices including depositi

Fishing – trapping – and vermin destroying

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437225, 437230, 156643, 427 98, H01L 2144

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active

052907333

ABSTRACT:
A method of manufacturing semiconductor devices comprises steps of selectively forming metal leads on the surface a semiconductor substrate, and immersing the semiconductor substrate in a solution containing dissolved metal for depositing the dissolved metal on the surfaces of the metal leads. The solution contains dissolved metal having an ionization tendency equal to or smaller than ionization of the metal leads.

REFERENCES:
patent: 4351696 (1982-09-01), Radigan
patent: 4547260 (1985-10-01), Takada et al.
patent: 4581101 (1986-04-01), Senoue et al.
patent: 4668335 (1987-05-01), Mockler et al.
S. Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach, Calif., 1986 pp. 559-564.

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