Method of making floating gate junction field effect transistor

Details Method of making floating gate junction field effect transistor Method of making floating gate junction field effect transistor

1992-05-29

1994-03-01

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 50, 437 53, 437 60, H01L 21265

Patent

active

052907228

ABSTRACT:
A floating gate junction field-effect transistor image sensor element (10) is formed in a semiconductor layer (14). A drain region (20) of a first conductivity type of the elements (14) is formed adjacent a gate region (26). A potential barrier (98) is formed in the gate region (26) for collecting carriers (102) of the second conductivity type, the barrier (98) also acting as a probing current well. A capacitor (28, 32, 48) is coupled to the gate region (26) and is operable to deliver a pulse to gate region (26) for sweeping out the carriers (102) to the substrate (12). The difference in gate bias voltage caused by the absence of the collected carriers (102) is sensed at a sense node (116) coupled to a source region (30).

REFERENCES:
patent: 4126900 (1978-11-01), Koomen et al.
patent: 4148046 (1979-04-01), Hendrickson et al.
patent: 4240093 (1980-12-01), Dingwall
patent: 4273805 (1981-06-01), Dawson et al.
patent: 4791611 (1988-12-01), Eldin et al.

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