Method of making complementary heterostructure field effect tran

Details Method of making complementary heterostructure field effect tran Method of making complementary heterostructure field effect tran

1992-10-02

1994-03-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437133, 437987, 148DIG72, H01L 21265

Patent

active

052907198

ABSTRACT:
Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p.sup.+ gate (50) formed by diffusion of dopants to convert n.sup.+ gate material to p.sup.+, and a pulse-doped layer adjacent the two-dimensional carrier gas channels to adjust threshold voltages. Further preferred embodiments have the conductivity-type converted gate (50) containing a residual layer of unconverted n.sup.+ which cooperates with the pulse-doped layer threshold shifting to yield threshold voltages which are small and positive for n-channel and small and negative for p-channel devices.

REFERENCES:
patent: 4603469 (1986-08-01), Armiento et al.
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4732870 (1988-03-01), Mimura
patent: 4771324 (1988-09-01), Odani et al.
patent: 4843033 (1989-06-01), Plumton et al.
Tang et al., "GaAs Gate Field Effect Transistor Fabrication", Feb. 1985, pp. 5064-5066, IBM-TDB.

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