Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1993-07-08

1994-03-01

Hearn, Brian

Fishing, trapping, and vermin destroying

437 40, 148DIG11, H01L 21265

Patent

active

052907163

ABSTRACT:
Semiconductor devices having a reduced parasitic capacitance while having a maximum acceptable current similar to those of prior devices, and a method of manufacturing thereof are disclosed. The inventive device has a hole at the bottom of which an insulating film separated from the hole walls is located, a semiconductor film being present in the hole, which is connected to the semiconductor substrate adjacent to the insulating film and a conductor film constituting a portion of the hole wall, and extends onto the insulating film so as to cover at least part of the film.

REFERENCES:
patent: 4545114 (1985-10-01), Ito et al.
patent: 4640721 (1987-02-01), Uehara et al.
patent: 4731341 (1988-03-01), Kamakatsu
patent: 4746629 (1988-05-01), Hamagasaki
patent: 5008207 (1991-04-01), Blouse et al.
patent: 5024957 (1991-06-01), Harame et al.
patent: 5039624 (1991-08-01), Kadota

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