Process of manufacturing a semiconductor device by using a photo

Fishing – trapping – and vermin destroying

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437 34, 437229, 148DIG106, H01L 21266

Patent

active

052907139

ABSTRACT:
A photoresist mask composed of a plurality of isolated plane patterns having no opening is formed on a main surface of a semiconductor substrate. The breakdown of the gate oxide film due to charge build up can be prevented because no photoresist mask opening patterning is involved.

REFERENCES:
patent: 5030582 (1991-07-01), Miyajima et al.
patent: 5032530 (1991-07-01), Lowrey et al.
patent: 5075242 (1991-12-01), Nakahara

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