Methods of and apparatus for sputtering material onto a substrat

Details Methods of and apparatus for sputtering material onto a substrat Methods of and apparatus for sputtering material onto a substrat

1984-03-09

1985-01-01

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

044915098

ABSTRACT:
An argon-nitrogen sputtering gas mixture is introduced into a cylindrical sputtering chamber (20) at essentially the geometric center of the chamber. The gas mixture then disperses through open areas in the chamber about upper and lower edges of a cylindrical tantalum target (24) and homogeneously into a sputtering area (30) between the target and a plurality of substrates (12) on a rotatable carrousel (28). As tantalum material then is sputtered from the target onto the substrates (12), tantalum films (16), which are uniformly doped with nitrogen, are formed on the substrates. A target cooling cell assembly (26), comprising a pair of C-shaped cooling cells (92) having independent cooling water input-and-return systems (95), provides improved cooling of the target during the sputtering operation.

REFERENCES:
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patent: 3595773 (1971-07-01), Wurm et al.
patent: 3619402 (1971-11-01), Wurm et al.
patent: 3632494 (1972-01-01), Herte et al.
patent: 3829373 (1973-01-01), Kuehnle
patent: 3856654 (1974-12-01), George
patent: 3976555 (1976-08-01), von Hartel
patent: 4128466 (1978-12-01), Harding et al.

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