Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1992-04-09

1994-03-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437229, 437931, 148DIG76, 148DIG82, 148DIG83, H01L 21426

Patent

active

052907090

ABSTRACT:
According to the present invention, in the ion implantation step in manufacturing a semiconductor device, a resist of a resist pattern formed on a portion of a semiconductor wafer is removed from the outer peripheral portion of the semiconductor wafer, and ion implantation is performed through the resist pattern.
Since the resist is removed from the outer peripheral portion, a contact portion between a semiconductor wafer fixing portion of an ion implantation unit and the semiconductor wafer is conductive. Therefore, charges generated by the ion implantation escape from the wafer fixing portion, and the semiconductor wafer is not charged, thereby preventing electrostatic breakdown.

REFERENCES:
patent: 5075240 (1991-12-01), Yama et al.

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