Method of creating low resistance contacts in high aspect ratio

Details Method of creating low resistance contacts in high aspect ratio Method of creating low resistance contacts in high aspect ratio

1998-04-07

2000-08-22

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419212, 20419217, 20419232, 20419234, 427 97, 427250, 438639, 438640, 438680, 438685, 438686, 438687, 438688, C23C 1434

Patent

active

06106677&

ABSTRACT:
A method of producing a low resistance contact in an opening carried in a substrate is comprised of the steps of forming a first layer of conductive material along a portion of the walls of the opening. A portion of the conductive material is resputtered from the walls of the opening to form a thin layer at the bottom of the opening. A second layer of conductive material is deposited on the substrate in a manner to fill the opening. A contact thus formed is also disclosed.

REFERENCES:
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patent: 4792842 (1988-12-01), Honma et al.
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patent: 5730835 (1998-03-01), Roberts et al.
patent: 5985103 (1999-11-01), Givens et al.
Homma et al., "Planar Deposition of Aluminum by RF/DC sputtering with RF bias", Journal of Electrochemical Society: Solid State Science and Technology, pp. 1466-1472, Jun. 1985.
Yoshio Homma and Sukeyoshi Tsunekawa; Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias; Jun., 1985; 1466-1472; Kokubunji, Tokyo 185, Japan.

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