Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-06-23
1977-07-05
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29580, 148171, 156648, 331 945H, 357 16, 357 18, H01L 2120, H01L 2174, H01S 306
Patent
active
040337960
ABSTRACT:
A method of making a buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM, or TEM modes. Following formation of a pump current confining layer in a substrate, an elongated groove or channel is formed in the substrate with the groove extending through the pump current confining layer. A first light guiding and carrier confining layer, an active layer, and a second light guiding and carrier confining layer are then grown successively on the grooved surface of the substrate with the active layer material having both a higher index of refraction and lower bandgap than the material(s) of the light guiding and carrier confining layers. The central portion of the active layers is completely surrounded by the light guiding and carrier confining layers and, due to the preponderance of nucleation sites at the bottom of the groove, the central portion of the active layer has a cross-section that is bowl-shaped, that is, arched inwardly toward the main body of the substrate. Due to the shape of the central portion of the active layer and the lower index of refraction of the light guiding and carrier confining layers, light waves produced by carrier recombination when the diode is forwarded biased are guided in the central portion of the active layer to thereby make CW room temperature operation with lowest order transverse modes possible with an output beam having a substantially symmetrical cross-section. Low threshold currents are obtained because the filamentary region of the laser is completely surrounded by the light guiding and carrier confining layers, both of which have larger energy gaps than the active region.
REFERENCES:
patent: 3436625 (1969-04-01), Newman
patent: 3465159 (1969-09-01), Stern
patent: 3579055 (1971-05-01), Ross
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3780358 (1973-12-01), Thompson
patent: 3783351 (1974-01-01), Tsukada et al.
patent: 3824493 (1974-07-01), Hakki
patent: 3849790 (1974-11-01), Gottsmann
patent: 3859178 (1975-01-01), Logan et al.
patent: 3865646 (1975-02-01), Logan et al.
patent: 3893044 (1975-07-01), Dumke et al.
Iida et al., "Morphological Studies on Selective Growth of GaAs" J. Crystal Growth 13/14, 1973, pp. 336-341.
Levenberger et al., "Complementary- MOS . . . Counter" Proc. IEEE, vol. 57, No. 9., Sept. 1969, pp. 1528-1532.
DeGelormo et al., "Fabrication of Injection Laser" IBM Tech. Discl. Bull., vol. 16, No. 7, Dec. 1973, p. 2156.
Doo, V. Y., "Junction Isolation . . . Regrowth Technique".
Ibid., vol. 8, No. 4, Sept. 1965, pp. 668-669.
Burnham Robert D.
Scifres Donald R.
Anderson T. J.
Colitz M. J.
Rutledge L. Dewayne
Saba W. G.
Xerox Corporation
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