Amplifiers – With semiconductor amplifying device – Integrated circuits
Patent
1975-09-15
1978-03-21
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Integrated circuits
307303, 330290, 330293, H03F 314
Patent
active
040805778
ABSTRACT:
The disclosed linear amplifier comprises a grounded N.sup.+ semiconductor substrate on which an N layer is epitaxially grown. The N epitaxial layer includes three separate P diffusion regions. One of the outermost regions is connected to an input terminal and includes an N diffusion region to form an input, common emitter NPN transistor with the epitaxial layer while forming a feedback, common base PNP transistor with the intermediate P diffusion region and epitaxial layer. The remaining P region forms a load, common base PNP transistor with the intermediate P region and epitaxial layer and is connected to an injector terminal. The intermediate P region and N region are connected to an output terminal.
REFERENCES:
patent: 3890634 (1975-06-01), Ruegg
Asada Katsuhiko
Murakami Kenji
Nakano Takao
Adams Bruce L.
Burns Robert E.
Lobato Emmanuel J.
Mitsubishi Denki & Kabushiki Kaisha
Mullins James B.
LandOfFree
Semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-572418