Epitaxial overgrowth method and devices

Details Epitaxial overgrowth method and devices Epitaxial overgrowth method and devices

1995-06-07

1998-05-05

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257279, H01L 2980

Patent

active

057478422

ABSTRACT:
A vertical field effect transistor (100) and fabrication method with buried gates; (104) having spaced apart gate fingers and connecting structure and overgrown with source and channel epilayer followed by a doping connection of the gate fingers and connecting structure.

REFERENCES:
patent: 3814995 (1974-06-01), Teszner
patent: 4036672 (1977-07-01), Kobayashi
patent: 4528745 (1985-07-01), Muraoka et al.
patent: 4712122 (1987-12-01), Nishizawa et al.
patent: 5231037 (1993-07-01), Yuan et al.
Alferov et al. Buried-gate gullium arsenide vertical field-effect transistor Sov. Tech. Phys. Lett. 12(2), Feb. 1986, pp. 77-78.
Asai et al. Lateral GaAs growth over tungsten grating an (001) GaAs substrates by metal organic chemical vapor depositor and applications to vertical field effect transistors. J. Appl. Phys. 55(10) 15 May 1984 pp. 3868-3870.

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