Semiconductor integrated circuit provided with thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

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257121, 257123, 257124, 257133, 257146, 257175, 327326, 327344, 327381, 327421, 327428, 327584, H01L 2974, H01L 31111

Patent

active

057478368

ABSTRACT:
A dV/dt clamp circuit is connected to a base of a phototransistor for triggering a control electrode of a thyristor, thereby making an attempt to prevent an operation error. A control electrode voltage of the thyristor is applied to the gate of the MOSFET via a high breakdown voltage capacitor. The gate electrode voltage of the MOSFET can be continuously held at a threshold value or more by adjusting a zener voltage of a zener diode and a resistance value of a resistor. Since with a high dV/dt the MOSFET can be operated at a high speed to allow conduction between the drain and source of the MOSFET, the phototransistor does not trigger the thyristor, thereby preventing an operation error.

REFERENCES:
patent: 4047054 (1977-09-01), Ahmed
patent: 4535251 (1985-08-01), Herman et al.
patent: 4768075 (1988-08-01), Broich et al.
patent: 4959556 (1990-09-01), Dekker et al.
patent: 5424563 (1995-06-01), Temple et al.

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