Semiconductor switching device capable of turn-on only at low ap

Details Semiconductor switching device capable of turn-on only at low ap Semiconductor switching device capable of turn-on only at low ap

1980-07-14

1981-12-08

Clawson, Jr., Joseph E.

357 20, 357 22, 357 56, 357 86, H01L 2974

Patent

active

043050840

ABSTRACT:
A semiconductor device which can be turned on at voltage signals applied thereto below a selected voltage magnitude includes a pinch-off region of semiconductor material having a precisely controlled net dopant charge situated in the gate current path of the semiconductor device such that the normal gate current path of the device is pinched-off when the voltage applied to the device equals or exceeds the selected magnitude.

REFERENCES:
patent: 3489962 (1970-01-01), McIntyre et al.
patent: 3671821 (1972-06-01), Nakata et al.
patent: 4012761 (1977-03-01), Ferro et al.
G. King, "Solid-State Relays," Electromechanical Design, Oct., 1974, pp. 14-23.

Affiliated with

Also associated with

Rating

Semiconductor switching device capable of turn-on only at low ap does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor switching device capable of turn-on only at low ap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor switching device capable of turn-on only at low ap will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-570339