Bipolar transistor controlled by field effect by means of an iso

Details Bipolar transistor controlled by field effect by means of an iso Bipolar transistor controlled by field effect by means of an iso

1982-06-14

1985-01-22

James, Andrew J.

357 41, 357 51, 357 34, 357 23, H01L 2702

Patent

active

044955138

ABSTRACT:
A bipolar semiconductor structure the conductive and blocked states of which are controlled by an isolated gate comprises a p.sup.+ type substrate constituting the emitter of a bipolar transistor, an N type epitaxial layer constituting the base, a p.sup.+ type area having a large surface, constituting a collector, covered with a collector contact and surrounded by an area wherein the epitaxial N type layer is exposed, an n.sup.+ type source area included in the collector area and extending along the border of the same so as to define an interval which constitutes the control gate of the structure, a resistive source access zone connected, on the one hand, to the source, and on the other hand, to the collector contact, the resistance of this zone being sufficient for preventing the structure from being rendered conductive in an irreversible manner.

REFERENCES:
patent: 4143421 (1979-03-01), Tonnel et al.
patent: 4327368 (1982-04-01), Uchida
patent: 4367509 (1983-01-01), Snyder et al.
patent: 4407005 (1983-09-01), Bell et al.

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