Permeable base transistor structure

Details Permeable base transistor structure Permeable base transistor structure

1982-08-23

1985-01-22

James, Andrew J.

357 15, 357 55, H01L 2980

Patent

active

044955111

ABSTRACT:
The performance of the conventional permeable base transistor (PBT) is imved by configuring its structure so as to eliminate excessive parasitic losses above and below its control grid structure, to eliminate excessive negative feedback in its source-grid (gate) region, and to eliminate the requirement for backfill of the trenches over the control grid structure. The improved PBT structure features, inter alia, a collector/anode/drain structure comprising a plurality of Schottky metal contacts, and the aforementioned control grid structure comprising a plurality of Schottky metal control grid elements. Each of the plurality of Schottky metal control grid elements, after fabrication, is shaped like an inverted upper case letter T emplaced in corresponding ones of a plurality of trenches of the improved PBT structure.

REFERENCES:
patent: 3855608 (1974-12-01), George et al.
patent: 4262296 (1981-04-01), Shealy et al.
patent: 4326209 (1982-04-01), Nishizawa et al.
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4403396 (1983-09-01), Stein

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