Solid state image sensor with reinforced fringe electric field a

Details Solid state image sensor with reinforced fringe electric field a Solid state image sensor with reinforced fringe electric field a

1996-03-29

1998-05-05

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

348311, 348320, H01L 2700, H04N 314

Patent

active

057477884

ABSTRACT:
The solid state image sensor disclosed includes a photoelectric conversion section, a vertical charge transfer section, a horizontal charge transfer section and an output section. The horizontal charge transfer section has an electric field reinforcing region in which a depletion layer is extended in a depth direction thereby reinforcing a fringe electric field. The vertical charge transfer section and the horizontal charge transfer section are disposed in a first semiconductor layer and a second semiconductor layer which are joined together, and the electric field reinforcing region is provided in a region in which the second semiconductor layer is not present. Thus, the transfer efficiency of the signal charge in the horizontal charge transfer section is enhanced.

REFERENCES:
patent: 4987466 (1991-01-01), Shibata et al.
patent: 5060038 (1991-10-01), Kimata et al.
patent: 5194724 (1993-03-01), Sekine
patent: 5243180 (1993-09-01), Nam
patent: 5521405 (1996-05-01), Nakashiba
Television Association Journal, vol. 37, No. 10, 1983, pp. 782-787.

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