Fishing – trapping – and vermin destroying
Patent
1994-12-13
1996-10-08
Fourson, George
Fishing, trapping, and vermin destroying
437 69, 437 18, H01L 2176
Patent
active
055630910
ABSTRACT:
A method for isolating semiconductor regions so that unit elements may be electrically insulated. A disclosed method includes the steps of: forming a pad oxide layer and a nitride layer on a silicon substrate, and forming an active region pattern; exposing the pad oxide to HF to remove a portion of the pad oxide, and depositing polysilicon so that pad oxide as the path for the diffusion of oxygen during the oxidation is not exposed to the oxidizing atmosphere; forming a nitride layer side wall on the side of field region to increase the distance between field oxide region and active region; and carrying out a field channel stop ion implantation after the completion of the first field oxidation and after removing the side wall of nitride layer and before a second field oxidation process.
REFERENCES:
Minegishi, K., "A New Self Aligned Framed Mask Method for Selective Oxidation", Jap. J. Appl. Phys, vol. 20 (1981) Supplement 20-1, pp. 55-61.
Kuang Y. Chiu, et al.; "The Sloped-Wall SWAMI-A Defect-Free Zero Bird's-Beak Local Oxidation Process for Scaled VLSI Technology"; IEEE Transactions on Electron Devices, vol. ED-30, No. 11, Nov. 1983; pp. 1505-1511.
C. Claeys, et al.; "Structural and Electrical Characterization of SWAMI Techniques for Submicron Technologies"; J. Electrochem, Socl, vol. 136, No. 9, Sep. 1989; pp. 2619-2624.
P. Molle, et al.; "Sealed Interface Local Oxidation by Rapid Thermal Nitridation"; J. Electrochem, vol. 138, No. 12, Dec. 1991; pp. 3722-3738.
B. Davari, et al.; "A Variable-Size Shallow Trench Isolation (STI) Technology with Diffused Sidewall Doping For Submicron CMOS"; IEDM 88; pp. 92-95.
Wolf, S., "Isolation Technologies for Integrated Circuits"; Silicon Processing for the VLSI ERA --vol. II; pp. 20-27, 1990.
Fourson George
Goldstar Electron Co. Ltd.
Loudermilk Alan R.
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