Method of fabricating InAs/GaSb/AlSb material system SRAM

Details Method of fabricating InAs/GaSb/AlSb material system SRAM Method of fabricating InAs/GaSb/AlSb material system SRAM

1995-06-26

1996-10-08

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437126, 437904, H01L 2170, H01L 2700

Patent

active

055630871

ABSTRACT:
An SRAM including first and second RITDs each formed with a heterostructure including a GaSb active layer sandwiched between AlSb barrier layers, which are sandwiched between InAs layers with each RITD having a contact connected to a first of the InAs layers. A TD including an AlSb layer sandwiched between InAS layers. A second InAs layer for each of the RITDs being integrally formed with a first InAs layer of the TD and a read/write terminal connected to a second InAs layer of the TD.

REFERENCES:
patent: 5059545 (1991-10-01), Frensley et al.
patent: 5345097 (1994-09-01), Nakagawa
patent: 5416040 (1995-05-01), Beam, III et al.

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