Fishing – trapping – and vermin destroying
Patent
1994-10-25
1996-10-08
Thomas, Tom
Fishing, trapping, and vermin destroying
H01L 218242
Patent
active
055630855
ABSTRACT:
In formation of a DRAM, a silicon nitride film is used as a mask to simultaneously expose a semiconductor substrate serving as an active region where an MOSFET is formed and a portion of the periphery of a trench. Therefore, even if the alignment offset of a resist pattern occurs, an interval between adjacent memory cells does not change. The interval between the adjacent memory cells is constantly the same as that when no alignment offset of the resist patter occurs. That is, only an n-type diffusion layer of the memory cell formed at a position adjacent to the trench comes close to source and drain regions of the adjacent memory cell.
REFERENCES:
patent: 4566914 (1986-01-01), Hall
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4728623 (1988-03-01), Lu et al.
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4916524 (1990-04-01), Teng et al.
patent: 4927779 (1990-03-01), Dhong et al.
patent: 4969022 (1990-11-01), Nishimoto et al.
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5075248 (1991-12-01), Yoon et al.
patent: 5102819 (1992-04-01), Malsushita et al.
patent: 5302542 (1994-04-01), Kishi et al.
"Flanged Trench Capacitor Cell" IBM TDB vol. 30, No. 5, Oct. 1987 pp. 410-411.
Isolation Merged Stacked Dynamic Random-Access Memory Cell. IBM TDB vol. 31, No. 7 Dec. 1988 pp. 39-40.
Kabushiki Kaisha Toshiba
Thomas Tom
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-56697