Method of manufacturing a Xmos insulated transistor

Details Method of manufacturing a Xmos insulated transistor Method of manufacturing a Xmos insulated transistor

1994-12-23

1996-10-08

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 62, 437 86, 437974, H01L 21265, H01L 2120, H01L 2176, H01L 21302

Patent

active

055630820

ABSTRACT:
A method of manufacturing a lateral insulated gate field effect transistor comprises the steps of forming a projecting portion on a first major surface of a semiconductor substrate, forming a pair of gate portions each of which is formed in each side of the projecting portion, forming an insulating layer on the resulting surface of the semiconductor substrate by burying the projecting portion and the pair of gate portions, and removing the semiconductor substrate from a second major surface of the semiconductor substrate to a position of the insulating layer in which the projecting portion is buried to expose the bottom surface of the projecting portion.

REFERENCES:
patent: 3200468 (1965-08-01), Dahlberg
patent: 4979014 (1990-12-01), Hieda et al.
patent: 5102819 (1992-04-01), Matsushita et al.
patent: 5120666 (1992-06-01), Gotou
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5315143 (1994-05-01), Tsuji
patent: 5376559 (1994-12-01), Mukai et al.

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