Substrate with an etched silicon compound film and an ink jet he

Details Substrate with an etched silicon compound film and an ink jet he Substrate with an etched silicon compound film and an ink jet he

1994-11-30

1996-11-12

Lund, Valerie A.

Incremental printing of symbolic information

Ink jet

Ejector mechanism

347 65, 428620, 428621, 428901, B41J 205, H01L 2912

Patent

active

055744877

ABSTRACT:
A substrate comprising a supporting member and a treated article provided on the supporting member comprising: 1) a patterned resistor layer; 2) a patterned material provided on the patterned resistor layer comprising at least aluminum; 3) a silicon compound film provided on both the patterned resistor layer and the patterned material; and 4) a multi-layered wiring provided on the article comprising as constituents at least a conductive layer comprising at least aluminum and electrically connected to the patterned material. The substrate includes substrates for integrated circuits, circuit boards, and ink jet recording heads.
A method for etching a silicon compound film comprises etching the silicon compound film in a gas flow rate ratio of CHF.sub.3 to C.sub.2 F.sub.6 of 1 to 6 under an etching pressure of 40 to 120 Pa.

REFERENCES:
patent: 4809428 (1989-03-01), Aden et al.

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