Silicon nitride film and method of deposition

Details Silicon nitride film and method of deposition Silicon nitride film and method of deposition

1977-02-14

1979-06-19

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 35, B05D 306

Patent

active

041587170

ABSTRACT:
A dense film of silicon nitride is deposited by a plasma discharge in a vapor of azidotrimethylsilane (AZS) (CH.sub.3).sub.3 SiN.sub.3. AZS is less reactive and easier to handle than the previously used silane SiH.sub.4. The resulting film is more stable chemically than the silicon nitride produced by other processes. It is useful for protective and anti-reflective coatings, for insulating, and for masking, particularly on semiconductive devices.

REFERENCES:
patent: 3424661 (1969-01-01), Androshuk
patent: 3637423 (1972-01-01), Sestrich

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