Gate turnoff thyristor with reduced gate trigger current

Details Gate turnoff thyristor with reduced gate trigger current Gate turnoff thyristor with reduced gate trigger current

1995-03-21

1996-11-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257138, 257147, 257149, 257154, H01L 2974, H01L 31111

Patent

active

055742971

ABSTRACT:
In order to compatibly implement improvement in withstand voltage and ON-state resistance as well as reduction in turnon loss and improvement in di/dt resistance, an n buffer layer (12) is locally exposed on a lower surface of a semiconductor substrate (160), while a polysilicon additional resistive layer (104) is formed to cover the exposed surface. An anode electrode (101) covering the lower surface of the semiconductor substrate (160) is connected to a p emitter layer (11) and the additional resistive layer (104). Thus, the n buffer layer (12) and the anode electrode (101) are connected with each other through the additional resistive layer (104), whereby a gate trigger current is reduced. Thus, turnon loss is reduced and di/dt resistance is increased. At the same time, the withstand voltage and the ON-state resistance are excellent due to provision of the n buffer layer (12). Thus, the turnon loss is reduced and the di/dt resistance is improved without deteriorating the withstand voltage and the ON-state resistance.

REFERENCES:
patent: 5028974 (1991-07-01), Kitagawa et al.
patent: 5146305 (1992-09-01), Bernier
patent: 5459338 (1995-01-01), Takayanagi et al.

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