Method for fabrication of n-channel MIS device

Details Method for fabrication of n-channel MIS device Method for fabrication of n-channel MIS device

1976-05-11

1978-03-21

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29590, 148187, B01J 1700

Patent

active

040795047

ABSTRACT:
A method for fabrication of an n-channel MIS device is composed of forming a source region and a drain region in the surface of a p-type semiconductor substrate by the diffusion of a first n-type impurity through a mask pattern including an insulator gate film, forming a first silicate glass film on the surface of the resultant substrate, providing windows for source, drain and gate contacts in the first silicate glass film, diffusing a second n-type impurity through the windows for source and drain contacts to form n-type high impurity concentration regions, selectively removing a second silicate glass film formed simultaneously with the diffusion of the second n-type impurity while leaving the portions of the second silicate glass film except at least the windows for source, drain and gate contacts, and providing metal contacts in the windows.

REFERENCES:
patent: 3909320 (1975-09-01), Cauge
patent: 3986903 (1976-10-01), Watrous

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