Fabrication of superconductive tunneling junction resistors and

Details Fabrication of superconductive tunneling junction resistors and Fabrication of superconductive tunneling junction resistors and

1983-02-22

1985-08-20

James, Andrew J.

357 4, H01L 3922, H01L 3912

Patent

active

045367817

ABSTRACT:
A superconductive junction device for fabricating Josephson integrated circuits is useful for replacing deposited thin-film resistors and for short-circuit device interconnections. Derived by "poisoning" a superconductive electrode or altering the barrier of a tunnel junction, the device displays controllable resistive properties at normal superconducting transition temperatures at substantial savings in the space occupied. Methods of fabricating the device using the selective niobium anodization process and ion implantation process are disclosed. When both upper and lower superconductive electrodes are poisoned, the device has linear properties whose resistance is identical to the normal resistance of unpoisoned junctions. Superconducting short circuits are readily obtained by oxygen ion implantation in thin film niobium electrodes.

REFERENCES:
J. C. Villegier & J. C. Veler, Investigation of High Rate Magnetron Sputtering of Niobium Films for Josephson Integrated Circuits, Proc. Applied Superconductivity Conference, Nov. 30, 1982.

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