Fishing – trapping – and vermin destroying
Patent
1995-11-09
1996-11-12
Nguyen, Nam
Fishing, trapping, and vermin destroying
148DIG95, H01L 2120
Patent
active
055739768
ABSTRACT:
A method of fabricating a semiconductor laser includes forming an active layer including a compound semiconductor material on a semiconductor substrate, the compound semiconductor material having an energy band gap that monotonically increases as the growth temperature of the material rises above a certain growth temperature, including growing a window structure forming region including at least a region which serves as a waveguide in the proximity of a laser resonator facet at a higher temperature than a region outside the window structure forming region. Therefore, the band gap energy of the window structure forming region is larger than that of the region outside the window structure forming region. Therefore, a semiconductor laser having a window structure can easily be fabricated with a high yield and with great repeatability.
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Arimoto et al, "150 mW Fundamental-Transverse-Mode Operation of 670 nm Window Laser Diode", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1874-1877.
Kato Manabu
Motoda Takashi
Fleck Linda J.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Nam
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