Method for manufacturing a silicon bonded wafer

Details Method for manufacturing a silicon bonded wafer Method for manufacturing a silicon bonded wafer

1995-07-28

1996-11-12

Dang, Trung

Fishing, trapping, and vermin destroying

437 62, 437 67, 437974, 148DIG12, H01L 2176

Patent

active

055739725

ABSTRACT:
A method for manufacturing a silicon bonded wafer includes the steps of preparing a first substrate of a lightly doped N-silicon having a plurality of V-grooves, preparing a second substrate of a heavily doped N-silicon having a first portion covered by an insulating film and a second portion having a top surface flush with the surface of the insulating film, bonding the first and the second substrates such that the V-grooves are located on the insulating film of the first portion of the second substrate, and grinding the first substrate at the back surface to provide a bonded wafer having a main surface exposing therein the bottom of the grooves. The grooves separate the bonded wafer into a power element forming region and a plurality of control circuit forming regions. The inverted V-grooves reduces less amount of areas for forming the control elements.

REFERENCES:
patent: 4784970 (1988-11-01), Solomon
patent: 4837186 (1989-06-01), Ohata et al.
patent: 4948748 (1990-08-01), Kitahara et al.
patent: 4963505 (1990-10-01), Fujii et al.
patent: 5356827 (1994-10-01), Ohoka
patent: 5374582 (1994-12-01), Okonogi et al.

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